Synthetization and Characterization of Mg-doped SnSe with Mg Substitution at the Sn Site by High Energy Ball Milling Technique

Abstract

Tin selenide (SnSe) is a semiconductor with an orthorhombic crystal structure having an indirect and direct band gap of 0.9 eV and 1.3 eV respectively. The SnSe and Mg-doped SnSe was synthesized by high energy ball milling technique at 300 RPM for 22 hrs. The formation of pure orthorhombic phases of SnSe and Mg-doped SnSe were confirmed by X-ray diffraction (XRD). From the XRD pattern, the crystalline size was estimated which lies below ~10 nm. The morphology of particle size distribution was carried out by scanning electron microscopy (SEM).