Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill

Abstract

Mn₄Si₇ is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn₄Si₇ and Mo-doped Mn₄Si₇ were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).