CMOS Mutator Circuits based on VD-DIBA for Realization of Meminductor/Memcapacitor and its Application

Abstract

In this research, meminductor and memcapacitor mutators have been introduced by utilizing voltage differencing differential input buffered amplifier in conjunction with a memristor and one capacitor. Notably, the memristor integrated into the proposed design is composed solely of transistors and a capacitor. It is asserted that CMOS-based memristors offer substantial advantages over their counterparts constructed from active blocks, as commonly found in existing literature, particularly in terms of integration, compatibility, power efficiency, reliability, and cost-effectiveness. The memcapacitor mutator can be easily derived from the meminductor mutator and vice versa by swapping the positions of the capacitor and memristor. Simulation of the proposed designs is carried out with the help of LTSPICE tool with TSMC 180nm CMOS technology parameters. The results obtained demonstrate that these designs exhibit commendable performance characteristics across a wide spectrum of frequencies, and notably, they successfully withstand scrutiny under the non-volatility test. Additionally, adaptive learning circuit is designed using the proposed mutator to corroborate the effectiveness of the design.