Recent Advances in Indium Selenide (InSe) based Photodetectors: A Mini Review

Abstract

Indium Selenide (InSe) is an emerging two-dimensional (2D) layered metal monochalcogenide (MMC) material which is highly regarded for its unique material properties. Due to the large surface area, high electron mobility and bandgap tunability (Visible to IR), InSe is widely sought for polarization sensitive photodetection. In the recent years, InSe heterostructure based broadband photodetectors (UV-Vis-IR) have received significant scientific attention. Photodetectors based on InSe layers/flakes and their heterostructures (with oxides, graphene, TMDCs, etc.) have displayed ultrahigh efficiency, fast switching and self-powered operation. Till now, a record breaking photoresponsivity up to10⁷ AW^-1 with switching time less than 2 µs for InSe based photodetector has been reported. Though, despite of scientific advancements, InSe based photodetectors suffer from numerous technological challenges. Therefore, in this mini review, we present a systematic and comprehensive review of noteworthy recent developments, scientific and technological challenges of InSe based optoelectronic devices. A brief discussion on the future aspects of InSe based photodetectors has also been presented.