Paramagnetism in Nitrogen Implanted SnO2 by Low Energy Ion beam Irradiation

Authors

  • Dr. Nitin Kumar Rajdhani College, University of Delhi, Department of Physics and Electronics, India¬, Delhi-110015
  • Dr. Mahesh C. Meena Rajdhani College, University of Delhi, Department of Physics and Electronics, India¬, Delhi-110015
  • Harshmani Yadav Rajdhani College, University of Delhi, Department of Physics and Electronics, India¬, Delhi-110015
  • Dr. Umesh Kumar Rajdhani College, University of Delhi, Department of Physics and Electronics, India¬, Delhi-110015
  • Dr. Mukesh Jewariya CSIR-National Physical Laboratory-New Delhi, India -110012

DOI:

https://doi.org/10.56042/ijpap.v62i8.7366

Keywords:

Electron paramagnetic resonance; Isotropic; SnO2

Abstract

The electron paramagnetic resonance (EPR) spectrum of nitrogen implanted SnO2 thin films have been study. An isotropic g (gyromagnetic ratio) tensor is observed and calculated for all Samples (viz. as deposited and for different concentration of nitrogen in SnO2). The different g values are attributed to the different concentration of paramagnetic species. With the increase in doping of nitrogen from 2% to 6%, the substitution of oxygen vacancies and interstitial atom in electronic structure is also observed. This is confirmed by absorption spectrum recorded by UV Visible.

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Published

2024-08-01

How to Cite

Paramagnetism in Nitrogen Implanted SnO2 by Low Energy Ion beam Irradiation. (2024). Indian Journal of Pure & Applied Physics (IJPAP), 62(8), 718-721. https://doi.org/10.56042/ijpap.v62i8.7366

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