X-Ray Diffraction Based Structural Optimization and Electrical Properties of Nd3+ Doped BaBi2Nb2O9 Aurivillius Ceramics

Abstract

Nd³⁺ doped BaBi₂Nb₂O₉ (BBN) ceramics were synthesized using conventional solid-state reaction route with optimized calcination (950 °C) and sintering (1050 °C) conditions to achieve phase purity. X-ray diffraction confirmed conformation of single-phase aurivillius framework with Fmmm space group. while scanning electron microscopy revealed a dense microstructure with a reduced, uniformly distributed grain size after Nd incorporation. FTIR analysis verified the presence of characteristic NbO₆ bonding, confirming structural stability. Ferroelectric studies showed well defined PE loops with decrease in maximum polarisation (P_m) from 12.85 μC/cm² to 8.47 μC/cm² upon Nd doping. Dielectric measurements showed a slight increase in dielectric constant (ε’) from 255.77 to 267.30 at 455 K on Nd³⁺ doping along with reduced dielectric loss (ε'') and stable frequency dependent behaviour. These properties confirm that Nd doped BBN is a potential alternative for lead free energy storage and capacitor applications.