DC Magnetron Sputtered Oxygenated Graphitic Carbon Nitride Synthesis Without Oxygen Doping

Authors

  • Soumik Kumar Kundu Institute of Engineering and Management, University of Engineering and Management Kolkata 700 091, India
  • Samit Karmakar Institute of Engineering and Management, University of Engineering and Management Kolkata 700 091, India https://orcid.org/0000-0002-0858-5168
  • Gouranga Sundar Taki Institute of Engineering and Management, University of Engineering and Management Kolkata 700 091, India https://orcid.org/0000-0001-9962-1840

DOI:

https://doi.org/10.56042/ijpap.v65i5.27306

Keywords:

Oxygenated graphitic carbon nitride, DC magnetron sputtering, Residual gas analysis

Abstract

This study presented a novel synthesis of oxygenated graphitic carbon nitride thin films via DC magnetron sputtering,  achieved without any intended oxygen supply from outside. Oxygen incorporation was occurred through residual gases i.e.,  atomic oxygen, hydroxyl radicals, water vapor, and CO₂, trapped in the deposition chamber. The synthesis environment was  carefully analyzed using a Quadrupole Residual Gas Analyzer (QRGA). This approach minimized defect formation  typically associated with external oxygen supply. The resulting films were characterized using X-ray photoelectron  spectroscopy (XPS), Raman spectroscopy, and UV-Vis spectroscopy to confirm successful oxygen integration.   

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Published

2026-05-26

How to Cite

DC Magnetron Sputtered Oxygenated Graphitic Carbon Nitride Synthesis Without Oxygen Doping. (2026). Indian Journal of Pure & Applied Physics (IJPAP), 64(5), 519-523. https://doi.org/10.56042/ijpap.v65i5.27306

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