An Investigation of the Structural, Morphological, and Dielectric, Properties of BiNi0.5Se0.5O3

Authors

  • PC Lalngilneia Department of Physics, National Institute of Technology Mizoram, Aizawl 796 012, India
  • Alok Shukla Department of Physics, National Institute of Technology Mizoram, Aizawl 796 012, India
  • Sushil Joshi Department of Physics, National Institute of Technology Mizoram, Aizawl 796 012, India

DOI:

https://doi.org/10.56042/ijpap.v64i3.22448

Keywords:

Solid-state reaction, XRD, SEM, Dielectric

Abstract

The preparation and comprehensive analysis of the BiNi0.5Se0.5O3 material, synthesized via a conventional solid-state route. Phase purity and crystallographic parameters were ascertained by powder X-ray diffraction, confirming the formation of the intended perovskite‐type structure. Microstructural examination by scanning electron microscopy revealed a uniformly polycrystalline morphology, with grain sizes predominantly in the 3 µm range. Elemental composition and stoichiometry were verified through energy-dispersive X-ray spectroscopy, which demonstrated the presence of Bi, Ni, Se, and O in ratios consistent with the nominal formula. Dielectric permittivity and electrical conductivity measurements were performed over a broad spectrum of temperatures and frequencies. Analysis of impedance spectra indicates a pronounced negative temperature coefficient of resistance, attributable to contributions from both grain interiors and grain-boundary regions. The frequency-dependent conductivity follows Jonscher’s universal power law, underscoring a hopping-dominated charge-transport mechanism. Collectively, these findings highlight BiNi0.5Se0.5O3 as a promising candidate for next generation electronic and energy‐storage applications.

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Published

2026-02-25

How to Cite

An Investigation of the Structural, Morphological, and Dielectric, Properties of BiNi0.5Se0.5O3. (2026). Indian Journal of Pure & Applied Physics (IJPAP), 64(3). https://doi.org/10.56042/ijpap.v64i3.22448

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