Optimizing Gallium Nitride (GaN) Based SOI-TF-FinFETs for Enhanced Linearity and Low Distortion in High-Frequency Applications

Abstract

Gallium Nitride (GaN) based Fin Field-Effect Transistors (FinFETs) represent a breakthrough in semiconductor technology, especially for applications requiring high power, high frequency, and high efficiency. GaN is a wide bandgap semiconductor material known for its excellent electrical properties, including high electron mobility, breakdown voltage, and thermal stability. These characteristics make GaN an ideal candidate for next-generation electronic devices, particularly in RF and microwave communication, power amplification, and high-speed digital circuits. This paper investigates the GaN-SOI truncated FinFET (GaN-SOI-TF-FinFET) designed for high-performance linearity and low distortion, focusing on key metrics such as second-order and third-order transconductances (g_m2 and g_m3) values, third-order intercept points (IIP3), second and third harmonic distortions (HD2 and HD3), third-order intermodulation distortion (IMD3), and the 1-dB compression point (P1dB). By leveraging the high electron mobility and wide bandgap of GaN, we have optimized the fin dimensions and gate structures to enhance device performance. Our results indicate that the GaN-SOI-TF-FinFET shows significant improvements compared to conventional Silicon FinFETs. The g_m2, g_m3, HD2, HD3, and IMD3 values are reduced by 42.86%, 62.50%, 112.50%, 56.12%, and 56.25% respectively, while IIP3 and P1dB values are increased by 300% and 100% respectively. These parameter improvements indicate better power handling capacity and robustness of the proposed device, highlighting the potential of GaN-SOI-TF-FinFET for advanced RF and communication applications requiring high linearity and low distortion.