Optimizing Gallium Nitride (GaN) Based SOI-TF-FinFETs for Enhanced Linearity and Low Distortion in High-Frequency Applications. Indian Journal of Pure & Applied Physics (IJPAP), [S. l.], v. 63, n. 2, p. 161–166, 2025. DOI: 10.56042/ijpap.v63i2.14928. Disponível em: https://or.niscpr.res.in/index.php/IJPAP/article/view/14928. Acesso em: 30 may. 2026.