A New Threshold Voltage Model of Short Channel FD-SOI MOSFET by Green’s Function Approach to Analytically Solving 2-D Laplace/Poisson’s Equations in Multi-Zone Structure and Applying it to Study Post-Implant Annealing Effect. Indian Journal of Pure & Applied Physics (IJPAP), [S. l.], v. 63, n. 1, p. 9–21, 2025. DOI: 10.56042/ijpap.v63i1.9124. Disponível em: https://or.niscpr.res.in/index.php/IJPAP/article/view/9124. Acesso em: 13 may. 2026.