Design and characteristics exploration of an InAs-source-based electrostatic doped vertical nanowire TFET. Indian Journal of Engineering and Materials Sciences (IJEMS), [S. l.], v. 33, n. 03, p. 306–311, 2026. DOI: 10.56042/ijems.v33i03.23089. Disponível em: https://or.niscpr.res.in/index.php/IJEMS/article/view/23089. Acesso em: 12 nov. 2026.