Highly-Stable and Lower-Power Static Random-Access Memory Design in Carbon Nanotube Field Effect Transistor Nanotechnology. Indian Journal of Pure & Applied Physics (IJPAP), [S. l.], v. 63, n. 12, 2025. DOI: 10.56042/ijpap.v63i12.21046. Disponível em: https://or.niscpr.res.in/index.php/IJPAP/article/view/21046. Acesso em: 17 may. 2026.