Improving On-state current and Ambipolarity of TFET using Gate-Drain and Gate Dielectric Engineering. Indian Journal of Pure & Applied Physics (IJPAP), [S. l.], v. 62, n. 7, p. 607–613, 2024. DOI: 10.56042/ijpap.v62i7.7715. Disponível em: https://or.niscpr.res.in/index.php/IJPAP/article/view/7715. Acesso em: 13 may. 2026.