Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs. Indian Journal of Pure & Applied Physics (IJPAP), [S. l.], v. 61, n. 2, p. 132–139, 2023. DOI: 10.56042/ijpap.v61i2.67097. Disponível em: https://or.niscpr.res.in/index.php/IJPAP/article/view/501. Acesso em: 15 may. 2026.